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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	2.5kV
Collector current	2A
Power dissipation	32W
Case	TO268
Gate-emitter voltage	±20V
Pulsed collector current	13A
Mounting	SMD
Gate charge	10.6nC
Kind of package	tube
Turn-on time	310ns
Turn-off time	252ns
Features of semiconductor devices	high voltage

IXBT2N250

Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268

Specification