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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	1.7kV
Collector current	65A
Power dissipation	1.04kW
Case	PLUS247™
Gate-emitter voltage	±20V
Pulsed collector current	300A
Mounting	THT
Gate charge	358nC
Kind of package	tube
Turn-on time	65ns
Turn-off time	595ns
Features of semiconductor devices	high voltage

IXBX75N170A

Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™

Specification