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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
We apologise for any inconvenience.

IMPORTANT: All international orders are subject to customs and duty fees as defined by the country of import. Customs and duty fees are not included in your TME order and/or shipping total. TME is not responsible for fees associated with import. All fees must be paid by the parcel recipient. Orders shipped and unclaimed or refused by customers will be managed under the TME protocol.

IXD2012NTR

IC: driver; H-bridge; half-bridge; SOIC8; 2.3A; Ch: 2; MOSFET; 10÷20V

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Manufacturer: IXYS

Manufacturer part number:
IXD2012NTR
TME Symbol:
IXD2012NTR

Specification

Manufacturer
IXYS
Type of integrated circuit
driver
Topology
H-bridge
Kind of integrated circuit
half-bridge
Case
SOIC8
Output current
2.3A
Number of channels
2
Integrated circuit features
MOSFET
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
30ns
Pulse fall time
20ns
Maximum output current
2.3A
Power dissipation
0.625W
Supply voltage
  • 10...20V
Gross weight1 g
Certificates
See other products in this category: MOSFET/IGBT drivers IXYS,
*
IXD2012NTR
0 in TME stock
Net price for quantities from 2500 pcs - 0.43 USDGross price for quantities from 2500 pcs - 0.43 USD
No. of pieces (Multiplicity: 2 500)