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Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	HiPerFET™, Polar™
Polarisation	unipolar
Drain-source voltage	600V
Drain current	10A
Power dissipation	200W
Case	TO263
On-state resistance	0.74Ω
Mounting	SMD
Gate charge	32nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	120ns

IXFA10N60P

Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263

Specification