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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	18A
Power dissipation	320W
Case	TO263
On-state resistance	0.23Ω
Mounting	SMD
Gate charge	35nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	ultra junction x-class
Reverse recovery time	127ns

IXFA18N60X

Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns

Specification