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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	250V
Drain current	146A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	7.4mΩ
Pulsed drain current	400A
Power dissipation	390W
Technology	HiPerFET™, X3-Class
Kind of channel	enhancement
Gate charge	0.19µC
Reverse recovery time	135ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN170N25X3

Module; single transistor; 250V; 146A; SOT227B; screw; Idm: 400A

Specification