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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	300V
Drain current	138A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	18mΩ
Pulsed drain current	500A
Power dissipation	890W
Technology	HiPerFET™, Polar™
Kind of channel	enhancement
Gate charge	258nC
Reverse recovery time	200ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN170N30P

Module; single transistor; 300V; 138A; SOT227B; screw; Idm: 500A

Specification