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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	300V
Drain current	210A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	4.6mΩ
Pulsed drain current	650A
Power dissipation	695W
Technology	HiPerFET™, X3-Class
Kind of channel	enhancement
Gate charge	375nC
Reverse recovery time	190ns
Gate-source voltage	±20V
Mechanical mounting	screw

IXFN210N30X3

Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A

Specification