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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	1kV
Drain current	23A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	390mΩ
Pulsed drain current	65A
Power dissipation	595W
Technology	HiPerFET™, Polar™
Kind of channel	enhancement
Gate charge	197nC
Reverse recovery time	300ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN26N100P

Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W

Specification