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Due to air traffic closures or restrictions in the Middle East region, we would like to inform you of supply difficulties and the possibility of order delays.
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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	100V
Drain current	420A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	2.3mΩ
Pulsed drain current	1kA
Power dissipation	1.07kW
Technology	GigaMOS™, HiPerFET™
Kind of channel	enhancement
Gate charge	670nC
Reverse recovery time	140ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN420N10T

Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA

Specification