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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	800V
Drain current	53A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	0.14Ω
Pulsed drain current	150A
Power dissipation	1.04kW
Technology	HiPerFET™, Polar™
Kind of channel	enhancement
Gate charge	250nC
Reverse recovery time	250ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXFN60N80P

Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A

Specification