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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	600V
Drain current	66A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	77mΩ
Pulsed drain current	200A
Power dissipation	960W
Technology	HiPerFET™, Polar3™
Kind of channel	enhancement
Gate charge	0.19µC
Reverse recovery time	250ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN80N60P3

Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A

Specification