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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	850V
Drain current	90A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	41mΩ
Pulsed drain current	180A
Power dissipation	1.2kW
Technology	HiPerFET™, X-Class
Kind of channel	enhancement
Gate charge	340nC
Reverse recovery time	250ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN90N85X

Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A

Specification