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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	1.7kV
Collector current	19A
Power dissipation	200W
Case	ISOPLUS i4-pac™ x024c
Gate-emitter voltage	±20V
Pulsed collector current	200A
Mounting	THT
Gate charge	146nC
Kind of package	tube
Turn-on time	90ns
Turn-off time	920ns
Features of semiconductor devices	high voltage

IXGF32N170

Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c

Specification