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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	1.7kV
Collector current	10A
Power dissipation	110W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	70A
Mounting	THT
Gate charge	32nC
Kind of package	tube
Turn-on time	0.3µs
Turn-off time	630ns
Features of semiconductor devices	high voltage

IXGH10N170

Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3

Specification