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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	2.5kV
Collector current	2A
Power dissipation	32W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	13.5A
Mounting	THT
Gate charge	10.5nC
Kind of package	tube
Turn-on time	115ns
Turn-off time	278ns
Features of semiconductor devices	high voltage

IXGH2N250

Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3

Specification