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Manufacturer	IXYS
Type of transistor	IGBT
Collector-emitter voltage	2.5kV
Collector current	13A
Power dissipation	150W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	8A
Mounting	THT
Gate charge	57nC
Kind of package	tube
Turn-off time	350ns
Features of semiconductor devices	high voltage

IXGH4N250C

Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage

Specification