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Manufacturer	IXYS
Type of transistor	IGBT
Technology	HiPerFAST™, XPT™
Collector-emitter voltage	900V
Collector current	50A
Power dissipation	400W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	200A
Mounting	THT
Gate charge	135nC
Kind of package	tube
Turn-on time	48ns
Turn-off time	820ns

IXGH50N90B2

Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3

Specification