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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	2.5kV
Collector current	75A
Power dissipation	780W
Case	TO264
Gate-emitter voltage	±20V
Pulsed collector current	530A
Mounting	THT
Gate charge	410nC
Kind of package	tube
Turn-on time	280ns
Turn-off time	725ns
Features of semiconductor devices	high voltage

IXGK75N250

Transistor: IGBT; NPT; 2.5kV; 75A; 780W; TO264

Specification