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Manufacturer	IXYS
Type of transistor	IGBT
Technology	HiPerFAST™, PT
Collector-emitter voltage	900V
Collector current	22A
Power dissipation	160W
Case	PLUS247™
Gate-emitter voltage	±20V
Pulsed collector current	200A
Mounting	THT
Gate charge	89nC
Kind of package	tube
Turn-on time	42ns
Turn-off time	690ns

IXGR32N90B2D1

Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™

Specification