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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	1.7kV
Collector current	2.5A
Power dissipation	50W
Case	PLUS247™
Gate-emitter voltage	±20V
Pulsed collector current	18A
Mounting	THT
Gate charge	18.5nC
Kind of package	tube
Turn-on time	91ns
Turn-off time	271ns
Features of semiconductor devices	high voltage

IXGR6N170A

Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™

Specification