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Manufacturer	IXYS
Type of transistor	IGBT
Technology	NPT
Collector-emitter voltage	1.7kV
Collector current	24A
Power dissipation	250W
Case	TO268
Gate-emitter voltage	±20V
Pulsed collector current	75A
Mounting	SMD
Gate charge	0.14µC
Kind of package	tube
Turn-on time	54ns
Turn-off time	456ns
Features of semiconductor devices	high voltage

IXGT24N170A

Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268

Specification