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Manufacturer	IXYS
Type of transistor	P-MOSFET
Technology	PolarP™
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-52A
Power dissipation	300W
Case	TO263
Gate-source voltage	±20V
On-state resistance	50mΩ
Mounting	SMD
Gate charge	60nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	120ns

IXTA52P10P

Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263

Specification