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Manufacturer	IXYS
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-600V
Drain current	-10A
Power dissipation	300W
Case	TO247-3
Gate-source voltage	±20V
On-state resistance	1Ω
Mounting	THT
Gate charge	135nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	0.5µs

IXTH10P60

Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns

Specification