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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1.5kV
Drain current	12A
Power dissipation	890W
Case	TO247-3
Mounting	THT
Gate charge	106nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	standard power mosfet
Reverse recovery time	1.2µs

IXTH12N150

Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO247-3; 1.2us

Specification