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Manufacturer	IXYS
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-36A
Power dissipation	180W
Case	TO247-3
Gate-source voltage	±20V
On-state resistance	75mΩ
Mounting	THT
Gate charge	95nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	180ns

IXTH36P10

Transistor: P-MOSFET; unipolar; -100V; -36A; 180W; TO247-3; 180ns

Specification