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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	4A
Power dissipation	290W
Case	TO247-3
Mounting	THT
Gate charge	75nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	linear power mosfet
Reverse recovery time	1.1µs

IXTH4N100L

Transistor: N-MOSFET; unipolar; 1kV; 4A; 290W; TO247-3; 1.1us

Specification