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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	200V
Drain current	60A
Power dissipation	540W
Case	TO247-3
On-state resistance	45mΩ
Mounting	THT
Gate charge	255nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	linear power mosfet
Reverse recovery time	330ns

IXTH60N20L2

Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns

Specification