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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	64A
Power dissipation	890W
Case	TO247-3
On-state resistance	51mΩ
Mounting	THT
Gate charge	143nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	ultra junction x-class
Reverse recovery time	450ns

IXTH64N65X

Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns

Specification