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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	200V
Drain current	80A
Power dissipation	520W
Case	TO247-3
On-state resistance	32mΩ
Mounting	THT
Gate charge	180nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	linear power mosfet
Reverse recovery time	250ns

IXTH80N20L

Transistor: N-MOSFET; unipolar; 200V; 80A; 520W; TO247-3; 250ns

Specification