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Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	PolarHT™
Polarisation	unipolar
Drain-source voltage	200V
Drain current	96A
Power dissipation	600W
Case	TO247-3
Gate-source voltage	±20V
On-state resistance	24mΩ
Mounting	THT
Gate charge	145nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	160ns

IXTH96N20P

Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 96A; 600W; TO247-3

Specification