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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	55V
Drain current	550A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	1.3mΩ
Pulsed drain current	1.65kA
Power dissipation	940W
Technology	GigaMOS™, TrenchT2™
Kind of channel	enhancement
Gate charge	595nC
Reverse recovery time	100ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXTN550N055T2

Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA

Specification