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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	40V
Drain current	600A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	1.3mΩ
Pulsed drain current	1.8kA
Power dissipation	940W
Technology	GigaMOS™, TrenchT2™
Kind of channel	enhancement
Gate charge	590nC
Reverse recovery time	100ns
Gate-source voltage	±30V
Mechanical mounting	screw

IXTN600N04T2

Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA

Specification