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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	40V
Drain current	660A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	0.85mΩ
Pulsed drain current	1.8kA
Power dissipation	1.04kW
Technology	TrenchT4™
Kind of channel	enhancement
Gate charge	0.86µC
Reverse recovery time	60ns
Gate-source voltage	±15V
Mechanical mounting	screw

IXTN660N04T4

Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA

Specification