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Manufacturer	IXYS
Type of transistor	P-MOSFET
Technology	TrenchP™
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-195A
Power dissipation	390W
Case	ISOPLUS247™
Gate-source voltage	±15V
On-state resistance	8mΩ
Mounting	THT
Gate charge	740nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	200ns

IXTR210P10T

Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns

Specification