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Manufacturer	IXYS
Type of transistor	IGBT
Technology	XPT™
Collector-emitter voltage	2.5kV
Collector current	8A
Power dissipation	280W
Case	TO263
Gate-emitter voltage	±20V
Pulsed collector current	70A
Mounting	SMD
Gate charge	45nC
Kind of package	tube
Turn-on time	24ns
Turn-off time	328ns
Features of semiconductor devices	high voltage

IXYA8N250CHV

Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO263

Specification