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Manufacturer	LITTELFUSE
Type of transistor	IGBT
Collector-emitter voltage	400V
Collector current	20A
Power dissipation	125W
Case	DPAK
Gate-emitter voltage	±15V
Pulsed collector current	50A
Mounting	SMD
Kind of package	reel, tape
Features of semiconductor devices	logic level
Application	ignition systems
Version	ESD

LGD8201TH

Transistor: IGBT; 400V; 20A; 125W; DPAK; Features: logic level; ESD

Specification

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