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Manufacturer	LITTELFUSE
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	18A
Pulsed drain current	60A
Power dissipation	139W
Case	TO247-3
Gate-source voltage	-5...20V
On-state resistance	0.12Ω
Mounting	THT
Gate charge	80nC
Kind of package	tube
Kind of channel	enhancement

LSIC1MO120E0120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 60A; 139W

Specification