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Manufacturer	LITTELFUSE
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.7kV
Drain current	4.4A
Pulsed drain current	11A
Power dissipation	60W
Case	TO247-3
Gate-source voltage	-5...20V
On-state resistance	0.75Ω
Mounting	THT
Gate charge	13nC
Kind of package	tube
Kind of channel	enhancement

LSIC1MO170E0750

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.4A; Idm: 11A; 60W

Specification