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Manufacturer	LITTELFUSE
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.7kV
Drain current	3.5A
Pulsed drain current	15A
Power dissipation	54W
Case	TO247-3
Gate-source voltage	-5...20V
On-state resistance	1Ω
Mounting	THT
Gate charge	15nC
Kind of package	tube
Kind of channel	enhancement

LSIC1MO170E1000

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 15A; 54W

Specification