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Manufacturer	IXYS
Type of semiconductor module	IGBT
Semiconductor structure	diode/thyristor/IGBT
Topology	3-phase diode-thyristor bridge, boost chopper, NTC thermistor
Max. off-state voltage	2.2kV
Collector current	80A
Case	E2-Pack
Application	Inverter
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	150A
Mechanical mounting	screw

MCNA120UI2200TED

Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 2.2kV

Specification