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Manufacturer	IXYS
Type of transistor	N-MOSFET x2
Technology	HiPerFET™, Polar3™
Polarisation	unipolar
Drain-source voltage	500V
Drain current	30A
Pulsed drain current	150A
Power dissipation	320W
Case	SMPD
Gate-source voltage	±30V
On-state resistance	0.12Ω
Mounting	SMD
Gate charge	96nC
Kind of channel	enhancement
Reverse recovery time	250ns

MMIX2F60N50P3

Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A

Specification