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Manufacturer	BOURNS
Type of transistor	IGBT
Technology	Field Stop, Trench
Collector-emitter voltage	600V
Collector current	10A
Power dissipation	82W
Case	DPAK
Gate-emitter voltage	±30V
Mounting	SMD
Gate charge	18.5nC
Turn-off switching energy	0.07mJ
Turn-on switching energy	0.2mJ

BIDD05N60T

Transistor: IGBT; Field Stop; 600V; 10A; 82W; DPAK; Eoff: 0.07mJ

Specification