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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	MaxSiC™, SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	19A
Pulsed drain current	60A
Power dissipation	56W
Case	TO263-7
Gate-source voltage	-5...20V
On-state resistance	0.175Ω
Mounting	SMD
Gate charge	47.3nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

MXP120A080FE-T1GE3

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W

Specification