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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	MaxSiC™, SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	18A
Pulsed drain current	58A
Power dissipation	56W
Case	TO247-4
Gate-source voltage	-5...20V
On-state resistance	0.175Ω
Mounting	THT
Gate charge	47.3nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

MXP120A080FL-GE3

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W

Specification