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Manufacturer	NTE Electronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Kind of transistor	RF
Drain-source voltage	25V
Drain current	50mA
Power dissipation	0.36W
Case	TO72
Mounting	THT
Kind of channel	depletion
Features of semiconductor devices	dual gate
Version	ESD

NTE222

Transistor: N-MOSFET; unipolar; RF; 25V; 50mA; 360mW; TO72; ESD

Specification