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Manufacturer	NTE Electronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	100V
Drain current	40A
Pulsed drain current	230A
Power dissipation	200W
Case	TO220
Gate-source voltage	±20V
On-state resistance	23mΩ
Mounting	THT
Kind of channel	enhancement

NTE2909

Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220

Specification