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Manufacturer	ONSEMI
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-3.05A
Pulsed drain current	-12A
Power dissipation	1.25W
Case	SO8
Gate-source voltage	±20V
On-state resistance	85mΩ
Mounting	SMD
Gate charge	16nC
Kind of package	reel, tape
Kind of channel	enhancement

NTMD3P03R2G

Transistor: P-MOSFET x2; unipolar; -30V; -3.05A; Idm: -12A; 1.25W

Specification