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NXH010P120M3F1PG

Module; transistor/transistor; 1.2kV; 105A; PIM18; Press-in PCB

Manufacturer: ONSEMI

Manufacturer part number:
NXH010P120M3F1PG
TME Symbol:
NXH010P120M3F1PG

Specification

Manufacturer
ONSEMI
Type of semiconductor module
MOSFET transistor
Semiconductor structure
transistor/transistor
Drain-source voltage
1.2kV
Drain current
105A
Case
PIM18
Topology
MOSFET half-bridge
Electrical mounting
Press-in PCB
On-state resistance
24.5mΩ
Pulsed drain current
316A
Power dissipation
272W
Technology
SiC
Gate-source voltage
-10...22V
Kind of package
in-tray
Mechanical mounting
screw
Gross weight100 g
Certificates
See other products in this category: Transistor modules ONSEMI,
*
NXH010P120M3F1PG
0 in TME stock
No. of pieces (Multiplicity: 28)
Product for special order