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Manufacturer	NEXPERIA
Type of transistor	N/P-MOSFET
Technology	Trench
Polarisation	unipolar
Drain-source voltage	30/-30V
Drain current	590/-410mA
Pulsed drain current	-1.7...2.3A
Case	DFN1010B-6, SOT1216
Gate-source voltage	±8/±8V
On-state resistance	670mΩ/1.4Ω
Mounting	SMD
Gate charge	1.05/1.2nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMCXB1000UEZ

Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA

Specification

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